![Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition: Journal of Vacuum Science & Technology A: Vol 34, No 1 Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition: Journal of Vacuum Science & Technology A: Vol 34, No 1](https://avs.scitation.org/action/showOpenGraphArticleImage?doi=10.1116/1.4935450&id=images/medium/1.4935450.figures.f8.gif)
Ultraviolet optical properties of aluminum fluoride thin films deposited by atomic layer deposition: Journal of Vacuum Science & Technology A: Vol 34, No 1
![Chemical Mechanism of AlF3 Etching during AlMe3 Exposure: A Thermodynamic and DFT Study | The Journal of Physical Chemistry C Chemical Mechanism of AlF3 Etching during AlMe3 Exposure: A Thermodynamic and DFT Study | The Journal of Physical Chemistry C](https://pubs.acs.org/cms/10.1021/acs.jpcc.2c00158/asset/images/medium/jp2c00158_0001.gif)
Chemical Mechanism of AlF3 Etching during AlMe3 Exposure: A Thermodynamic and DFT Study | The Journal of Physical Chemistry C
![Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride | The Journal of Physical Chemistry C Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride | The Journal of Physical Chemistry C](https://pubs.acs.org/cms/10.1021/acs.jpcc.5b02625/asset/images/large/jp-2015-02625x_0008.jpeg)
Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride | The Journal of Physical Chemistry C
![Aluminium fluoride – the strongest solid Lewis acid: structure and reactivity - Catalysis Science & Technology (RSC Publishing) DOI:10.1039/C6CY02369J Aluminium fluoride – the strongest solid Lewis acid: structure and reactivity - Catalysis Science & Technology (RSC Publishing) DOI:10.1039/C6CY02369J](https://pubs.rsc.org/image/article/2017/CY/c6cy02369j/c6cy02369j-f1_hi-res.gif)
Aluminium fluoride – the strongest solid Lewis acid: structure and reactivity - Catalysis Science & Technology (RSC Publishing) DOI:10.1039/C6CY02369J
![Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride | The Journal of Physical Chemistry C Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride | The Journal of Physical Chemistry C](https://pubs.acs.org/cms/10.1021/acs.jpcc.5b02625/asset/images/medium/jp-2015-02625x_0003.gif)
Atomic Layer Deposition of AlF3 Using Trimethylaluminum and Hydrogen Fluoride | The Journal of Physical Chemistry C
![Inhibition of AlF3·3H2O Impurity Formation in Ti3C2Tx MXene Synthesis under a Unique CoFx/HCl Etching Environment | ACS Applied Energy Materials Inhibition of AlF3·3H2O Impurity Formation in Ti3C2Tx MXene Synthesis under a Unique CoFx/HCl Etching Environment | ACS Applied Energy Materials](https://pubs.acs.org/cms/10.1021/acsaem.9b01618/asset/images/medium/ae9b01618_0009.gif)
Inhibition of AlF3·3H2O Impurity Formation in Ti3C2Tx MXene Synthesis under a Unique CoFx/HCl Etching Environment | ACS Applied Energy Materials
![The missing hydrate AlF3·6H2O [Al(H2O)6]F3: Ionothermal synthesis, crystal structure and characterization of aluminum fluoride hexahydrate - ScienceDirect The missing hydrate AlF3·6H2O [Al(H2O)6]F3: Ionothermal synthesis, crystal structure and characterization of aluminum fluoride hexahydrate - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S1293255816303363-gr1.jpg)
The missing hydrate AlF3·6H2O [Al(H2O)6]F3: Ionothermal synthesis, crystal structure and characterization of aluminum fluoride hexahydrate - ScienceDirect
![CVs recorded on graphite in 1.3NaF-AlF3-Al2O3 melt with a scan rate of... | Download Scientific Diagram CVs recorded on graphite in 1.3NaF-AlF3-Al2O3 melt with a scan rate of... | Download Scientific Diagram](https://www.researchgate.net/publication/331263084/figure/fig8/AS:962642395013147@1606523240908/CVs-recorded-on-graphite-in-13NaF-AlF3-Al2O3-melt-with-a-scan-rate-of-100mVs-at-860C.png)
CVs recorded on graphite in 1.3NaF-AlF3-Al2O3 melt with a scan rate of... | Download Scientific Diagram
![Induced AlF3 segregation for the generation of reciprocal Al2O3 and LiF coating layer on self-generated LiMn2O4 surface of over-lithiated oxide based Li-ion battery - ScienceDirect Induced AlF3 segregation for the generation of reciprocal Al2O3 and LiF coating layer on self-generated LiMn2O4 surface of over-lithiated oxide based Li-ion battery - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0013468616323751-fx1.jpg)
Induced AlF3 segregation for the generation of reciprocal Al2O3 and LiF coating layer on self-generated LiMn2O4 surface of over-lithiated oxide based Li-ion battery - ScienceDirect
![Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes: Journal of Vacuum Science & Technology A: Vol 34, No 3 Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes: Journal of Vacuum Science & Technology A: Vol 34, No 3](https://avs.scitation.org/action/showOpenGraphArticleImage?doi=10.1116/1.4943385&id=images/medium/1.4943385.figures.f1.gif)
Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes: Journal of Vacuum Science & Technology A: Vol 34, No 3
![Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes: Journal of Vacuum Science & Technology A: Vol 34, No 3 Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes: Journal of Vacuum Science & Technology A: Vol 34, No 3](https://avs.scitation.org/action/showOpenGraphArticleImage?doi=10.1116/1.4943385&id=images/medium/1.4943385.figures.f2.gif)
Optimizing AlF3 atomic layer deposition using trimethylaluminum and TaF5: Application to high voltage Li-ion battery cathodes: Journal of Vacuum Science & Technology A: Vol 34, No 3
![Chemical Mechanism of AlF3 Etching during AlMe3 Exposure: A Thermodynamic and DFT Study | The Journal of Physical Chemistry C Chemical Mechanism of AlF3 Etching during AlMe3 Exposure: A Thermodynamic and DFT Study | The Journal of Physical Chemistry C](https://pubs.acs.org/cms/10.1021/acs.jpcc.2c00158/asset/images/medium/jp2c00158_0003.gif)
Chemical Mechanism of AlF3 Etching during AlMe3 Exposure: A Thermodynamic and DFT Study | The Journal of Physical Chemistry C
![Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride: The Journal of Chemical Physics: Vol 146, No 5 Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride: The Journal of Chemical Physics: Vol 146, No 5](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4973310&id=images/medium/1.4973310.figures.online.f1.jpg)
Competition between Al2O3 atomic layer etching and AlF3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride: The Journal of Chemical Physics: Vol 146, No 5
![CVs recorded on tungsten in 1.3NaF-AlF3-Al2O3 melt with various scan... | Download Scientific Diagram CVs recorded on tungsten in 1.3NaF-AlF3-Al2O3 melt with various scan... | Download Scientific Diagram](https://www.researchgate.net/publication/331263084/figure/fig10/AS:962642399203332@1606523241148/CVs-recorded-on-tungsten-in-13NaF-AlF3-Al2O3-melt-with-various-scan-rates-of.png)